inchange semiconductor isc product specification isc silicon npn power transistor 2SD1345 description high switching time low collector saturation voltage : v ce(sat) = 0.4v(max)@i c = 4a wide area of safe operation complement to type 2sb983 applications inverters, converters controllers for dc motor, pulse motor switching power supplies general power applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 6 v i c collector current-continuous 7 a i cm collector current-peak 12 a i b b base current-continuous 1.5 a i bm base current-peak 4 a p c total power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 3.1 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1345 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 1ma; i b = 0 b 50 v v ce (sat) collector-emitter saturation voltage i c = 4a; i b = 0.4a b 0.4 v v be (sat) base-emitter saturation voltage i c = 4a; i b = 0.4a b 1.2 v i cbo collector cutoff current v cb = 40v; i e = 0 0.1 ma i ceo collector cutoff current v ce = 40v; i b = 0 b 0.1 ma i ebo emitter cutoff current v eb = 4v; i c = 0 0.1 ma h fe-1 dc current gain i c = 1a; v ce = 2v 70 200 h fe-2 dc current gain i c = 5a; v ce = 2v 30 f t current-gain?bandwidth product i c = 1a; v ce = 5v 10 mhz switching times t on turn-on time 0.2 s t stg storage time 0.9 s t f fall time r l = 10 , v bb2 = -5v i c = 2a; i b1 = -i b2 = 0.2a 0.3 s isc website www.iscsemi.cn 2
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